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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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The RF MOSFET Line
RF Power Field-Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 28/32 volt transmitter equipment. * Typical Two-Tone Performance @ 860 MHz, 32 Volts, Narrowband Fixture Output Power -- 130 Watts PEP Power Gain -- 17.3 dB Efficiency -- 41% IMD -- -32.5 dBc * 100% Tested for Load Mismatch Stress at All Phase Angles with 10:1 VSWR @ 32 Vdc, 860 MHz, 130 Watts, f1 = 857 MHz, f2 = 863 MHz * Integrated ESD Protection * Excellent Thermal Stability * Characterized with Differential Large-Signal Impedance Parameters
MRF374A
470 - 860 MHz, 130 W, 32 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET
CASE 375F-04, STYLE 1 NI-650
MAXIMUM RATINGS
Rating Drain-Source Voltage Gate-Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 70 - 0.5, +15 302 1.72 - 65 to +150 200 Unit Vdc Vdc Watts W/C C C
ESD PROTECTION CHARACTERISTICS
Test Conditions Human Body Model Machine Model Class 1 (Minimum) M2 (Minimum)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 0.58 Unit C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 3
MOTOROLA RF Motorola, Inc. 2003 DEVICE DATA
MRF374A 1
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS (1) Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID =10 A) Zero Gate Voltage Drain Current (VDS = 32 Vdc, VGS = 0 Vdc) Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = 10 V, ID = 200 A) Gate Quiescent Voltage (VDS = 32 V, ID = 100 mA) Drain-Source On-Voltage (VGS = 10 V, ID = 3 A) DYNAMIC CHARACTERISTICS (1) Input Capacitance (VDS = 32 V, VGS = 0 V, f = 1 MHz) Output Capacitance (VDS = 32 V, VGS = 0 V, f = 1 MHz) Reverse Transfer Capacitance (VDS = 32 V, VGS = 0 V, f = 1 MHz) Ciss Coss Crss -- -- -- 97.3 49 1.91 -- -- -- pF pF pF VGS(th) VGS(Q) VDS(on) 2 2.5 -- 2.9 3.3 0.41 4 4.5 0.45 Vdc Vdc Vdc V(BR)DSS IDSS IGSS 70 -- -- -- -- -- -- 1 1 Vdc Adc Adc Symbol Min Typ Max Unit
FUNCTIONAL CHARACTERISTICS, NARROWBAND OPERATION (In Motorola MRF374A Narrowband Circuit, 50 ohm system) (2) Common Source Power Gain (VDD = 32 Vdc, Pout = 130 W PEP, IDQ = 2 x 200 mA, f1 = 857 MHz, f2 = 863 MHz) Drain Efficiency (VDD = 32 Vdc, Pout = 130 W PEP, IDQ = 2 x 200 mA, f1 = 857 MHz, f2 = 863 MHz) Intermodulation Distortion (VDD = 32 Vdc, Pout = 130 W PEP, IDQ = 2 x 200 mA, f1 = 857 MHz, f2 = 863 MHz) Load Mismatch (VDD = 32 Vdc, Pout = 130 W Two-Tone, IDQ = 2 x 200 mA, f1 = 857 MHz, f2 = 863 MHz, VSWR 10:1 at All Phase Angles of Test) Gps 16 17.3 -- dB
36
41.2
--
%
IMD
--
-32.5
-28
dB
No Degradation in Output Power
TYPICAL CHARACTERISTICS, BROADBAND OPERATION (In Motorola MRF374 Broadband Circuit, 50 ohm system) Common Source Power Gain (VDD = 32 Vdc, Pout = 100 W PEP, IDQ = 750 mA, f1 = 857 MHz, f2 = 863 MHz) Drain Efficiency (VDD = 32 Vdc, Pout = 100 W PEP, IDQ = 750 mA, f1 = 857 MHz, f2 = 863 MHz) Intermodulation Distortion (VDD = 32 Vdc, Pout = 100 W PEP, IDQ = 750 mA, f1 = 857 MHz, f2 = 863 MHz) (1) Each side of device measured separately. (2) Measured in push-pull configuration. Gps -- 15.8 -- dB
--
35
--
%
IMD
--
34.5
--
dB
MRF374A 2
MOTOROLA RF DEVICE DATA
VGS
R3A L3A R2 L4 C4A R1A L2A
MRF374 Rev 3a
C7A C13A C14A C12A C11 L1B C12B C14B
VDD
R4A C9A C6 R1B C10 C9B R4B L3B L2B C7B
L1A
RF INPUT
C1
C2
C3 C4B
C5
RF OUTPUT
C13B
VGS
R3B
VDD
Vertical Balun Mounting Detail
Output 2 (12.5 ohm microstrip) Output 1 (12.5 ohm microstrip)
Motorola Vertical 860 MHz Balun Rogers RO3010 (50 mil thick)
PCB Substrate (30 mil thick)
Note: Trim Balun PCB so that a 35 mil "tab" fits into the main PCB slot" resulting in Balun solder pads being level with the PCB substrate solder pads when fully inserted.
Input (50 ohm microstrip)
Ground
55 mil slot cut out to accept Balun
Figure 1. MRF374A Narrowband Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
MRF374A 3
Table 1. MRF374A Narrowband Test Circuit Component Layout Designations and Values
Designation C1 C2 C3 C4A, B, C12A, B C5 C6 C7A, B, C14A, B C9A, B C10 C11 C13A, B L1A, B L2A, B L3A, B L4 R1A, B R2 R3A, B R4A, B PCB Balun B1A, B Description 0.8 pF Chip Capacitor, B Case, ATC 2.2 pF Chip Capacitor, B Case, ATC 0.5 - 5.0 pF Variable Capacitor, Johanson Gigatrim 47 pF Chip Capacitors, B Case, ATC 1.0 pF Chip Capacitor, B Case, ATC 10 pF Chip Capacitor, B Case, ATC 100,000 pF Chip Capacitors, B Case, ATC 15 pF Chip Capacitors, B Case, ATC 3.9 pF Chip Capacitor, B Case, ATC 5.1 pF Chip Capacitor, B Case, ATC 2.2 mF, 100 V Chip Capacitors, Vishay #VJ3640Y225KXBAT 5.0 nH, Coilcraft #A02T 8.0 nH, Coilcraft #A03T 130.0 nH, Coilcraft #132-11SMJ 8.8 nH, Coilcraft #1606-8 51 W, 1/4 W Chip Resistors, Vishay Dale (1210) 10 W, 1/2 W Chip Resistor, Vishay Dale (2010) 3.3 kW, 1/8 W Chip Resistors, Vishay Dale (1206) 180 W, 1/4 W Chip Resistors, Vishay Dale (1210) MRF374 Printed Circuit Board Rev 03, Rogers RO4350, Height 30 mils, r = 3.48 Vertical 860 MHz Narrowband Balun, Printed Circuit Board Rev 01, Rogers RO3010, Height 50 mils, r = 10.2
MRF374A 4
MOTOROLA RF DEVICE DATA
C19
VGS
R6 R7A C18A
R4
R3 R5T R2A
MRF374
C15A C17A
C16A
VDD
L3A C3A C4 C5 R1A
L5 C2
C6 L4 R1B C7
C8A
C9A C10 L2
L1A C12 C11 C13 C14A
RF INPUT
C1
RF OUTPUT
C14B
L6 R7B
C3B
C8B C9B
L1B
L3B
C17B C15B R2B C16B
VGS
C18B
VDD
Vertical Balun Mounting Detail
Output 2 (12.5 ohm microstrip) Output 1 (12.5 ohm microstrip)
Motorola Vertical 660 MHz Balun Rogers RO3010 (50 mil thick)
PCB Substrate (30 mil thick)
Note: Trim Balun PCB so that a 35 mil tab" fits into the main PCB slot" resulting in Balun solder pads being level with the PCB substrate solder pads when fully inserted.
Input (50 ohm microstrip)
Ground
55 mil slot cut out to accept Balun
Figure 2. MRF374 Broadband Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
MRF374A 5
Table 2. MRF374 Broadband Test Circuit Component Designations and Values
Designation C1 C2 C3A, B, C14A, B C4 C5 C6 C7 C8A, B C9A, B C10 C11 C12 C13 C15A, B C16A, B C17A, B C18A, B C19 L1A, B, L3A, B, L4, L5 L2, L6 R1A, B R2A, B, R7A, B R3 R4 R5T R6 PCB Balun B1, B2 Description 0.8 pF Chip Capacitor, B Case, ATC 8.2 pF Chip Capacitor, B Case, ATC 100 pF Chip Capacitors, B Case, ATC 7.5 pF Chip Capacitor, B Case, ATC 3.0 pF Chip Capacitor, B Case, ATC 9.1 pF Chip Capacitor, B Case, ATC 15 pF Chip Capacitor, B Case, ATC 12 pF Chip Capacitors, B Case, ATC 4.7 pF Chip Capacitors, B Case, ATC 10 pF Chip Capacitor, B Case, ATC 3.6 pF Chip Capacitor, B Case, ATC 3.0 pF Chip Capacitor, B Case, ATC 2.7 pF Chip Capacitor, B Case, ATC 3.3 mF, 100 V Chip Capacitors, Vitramon #VJ3640Y335KXBAT 22 mF, 35 V Chip Capacitors, Kemet #491D226K035AS 3.9 pF Chip Capacitors, B Case, ATC 2.2 mF, 50 V Chip Capacitors, Vitramon #VJ2225Y225KXAAT 10 mF, 35 V Chip Capacitor, Kemet #T491D106K035AS 8.0 nH, Coilcraft #A03T 12.5 nH, Coilcraft #A04T 22 , 1/8 W Chip Resistor, Vishay Dale (1206) 10 , 1/8 W Chip Resistor, Vishay Dale (1206) 390 , 1/8 W Chip Resistor, Vishay Dale (1206) 2.4 k, 1/8 W Chip Resistor, Vishay Dale (1206) 470 Thermistor, KOA SPEER MOT #0680149M01 6.8 k, 1/2 W Resistor (Axial Lead), Vishay Dale (2010) MRF374 Printed Circuit Board Rev 03, Rogers RO4350, Height 30 mils, r = 3.48 Vertical 660 MHz Broadband Balun, Printed Circuit Board Rev 01, Rogers RO3010, Height 50 mils, r = 10.2
MRF374A 6
MOTOROLA RF DEVICE DATA
MRF374A TYPICAL CHARACTERISTICS
18 17.5 G ps , POWER GAIN (dB) 17 16.5 16 15.5 15 400 Pout = 100 W (PEP) IDQ = 750 mA nFrequency = 6 MHz 500 600 700 800 900 VDD = 32 Vdc -15 -20 -25 -30 -35 -40 -45 -50 400 32 Vdc VDD = 28 Vdc Pout = 100 W (PEP) IDQ = 750 mA nFrequency = 6 MHz
28 Vdc
IMD, INTERMODULATION DISTORTION (dBc)
500
600
700
800
900
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 3. Gain versus Frequency in Broadband Circuit
45 IRL, INPUT RETURN LOSS (dB) 40 , DRAIN EFFICIENCY (%) 35 30 25 20 VDD = 28 Vdc 32 Vdc Pout = 100 W (PEP) IDQ = 750 mA nFrequency = 6 MHz 20 Gps G ps , POWER GAIN (dB) 15
Figure 4. Intermodulation Distortion versus Frequency in Broadband Circuit
40
35 VDD = 32 Vdc Pout = 100 W (PEP) IDQ = 750 mA nFrequency = 6 MHz
D
10
30
5
25
IRL 0 400 20 900
400
500
600
700
800
900
500
600
700
800
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 5. Drain Efficiency versus Frequency in Broadband Circuit
, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 200 C oss , C iss , Capacitance (pF) 20
Figure 6. Performance in Broadband Circuit
40 35 30 25 20 15 10 5 0 0.1 1 10 VDD = 32 Vdc IDQ = 1.1 A f = 860 MHz 2 K Mode COFDM 64 QAM 10.5 Peak/Avg. Ratio Gps IMR
, DRAIN EFFICIENCY (%) D -20 -25 -30 -35 -40 -45 -50 -55 -60 100 IMR, INTERMODULATION (dBc)
100
Ciss
10
50
Coss Crss
5
0
0
10
20
30
40
50
0 60
C rss , Capacitance (pF)
150
15
VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Capacitance versus Voltage
Figure 8. COFDM Intermodulation, Gain and Efficiency versus Output Power in Broadband Circuit
MOTOROLA RF DEVICE DATA
MRF374A 7
MRF374A TYPICAL CHARACTERISTICS
, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 40 35 30 25 20 15 10 5 0 0.1 1 10 Gps IMR VDD = 32 Vdc IDQ = 1.1 A f = 860 MHz -20 -25 IMR, INTERMODULATION (dBc) G ps , POWER GAIN (dB) -30 -35 -40 -45 -50 -55 -60 100 19 18 17 16 15 14 13 1 10 100 Pout, OUTPUT POWER (WATTS) PEP IDQ = 1.0 A 800 mA 600 mA 400 mA 200 mA VDD = 32 Vdc f = 857 MHz nFrequency = 6 MHz
Pout, OUTPUT POWER (WATTS) AVG.
Figure 9. 8-VSB Intermodulation, Gain and Efficiency versus Output Power in Broadband Circuit
Figure 10. Power Gain versus Peak Output Power in Narrowband Circuit
IMD, INTERMODULATION DISTORTION (dBc)
-20 -25 -30 -35 -40 -45 -50 -55 1 800 mA 1.0 A VDD = 32 Vdc f = 857 MHz nFrequency = 6 MHz 100 600 mA IDQ = 200 mA , DRAIN EFFICIENCY (%) D
50 40 30 20 10 0 VDD = 32 Vdc IDQ = 800 mA f = 857 MHz nFrequency = 6 MHz 1 10 Pout, OUTPUT POWER (WATTS) PEP 100
400 mA
10 Pout, OUTPUT POWER (WATTS) PEP
Figure 11. Intermodulation Distortion versus Peak Output Power in Narrowband Circuit
Figure 12. Drain Efficiency versus Peak Output Power in Narrowband Circuit
MRF374A 8
MOTOROLA RF DEVICE DATA
MRF374A TYPICAL CHARACTERISTICS VDD = 28 Vdc
18 17.5 G ps , POWER GAIN (dB) 17 16.5 16 15.5 15 1 10 100 Pout, OUTPUT POWER (WATTS) PEP 560 MHz 760 MHz 660 MHz 860 MHz VDD = 28 Vdc IDQ = 750 mA Tone Spacing = 6 MHz 18 17.5 G ps , POWER GAIN (dB) 17 560 MHz 16.5 16 15.5 15 1 10 100 Pout, OUTPUT POWER (WATTS) PEP 760 MHz 660 MHz 860 MHz VDD = 32 Vdc IDQ = 750 mA Tone Spacing = 6 MHz 470 MHz
VDD = 32 Vdc
470 MHz
Figure 13. Power Gain versus Peak Output Power in Broadband Circuit
45 VDD = 28 Vdc IDQ = 750 mA Tone Spacing = 6 MHz 860 MHz , DRAIN EFFICIENCY (%) 560 MHz 660 MHz 470 MHz
Figure 14. Power Gain versus Peak Output Power in Broadband Circuit
40
, DRAIN EFFICIENCY (%)
35
VDD = 32 Vdc IDQ = 750 mA Tone Spacing = 6 MHz
860 MHZ 560 MHz 660 MHz 470 MHz
30
25
20
15
10
5 0 1 10 100 Pout, OUTPUT POWER (WATTS) PEP 1 10 100 Pout, OUTPUT POWER (WATTS) PEP
Figure 15. Drain Efficiency versus Peak Output Power in Broadband Circuit
-25 -30 -35 -40 -45 -50 VDD = 28 Vdc IDQ = 750 mA Tone Spacing = 6 MHz 660 MHZ 560 MHZ 860 MHZ
Figure 16. Drain Efficiency versus Peak Output Power in Broadband Circuit
-25 -30 -35 -40 760 MHZ -45 -50 1 10 100 Pout, OUTPUT POWER (WATTS) PEP 470 MHZ VDD = 32 Vdc IDQ = 750 mA Tone Spacing = 6 MHz 660 MHZ 560 MHZ 860 MHZ
IMD, INTERMODULATION DISTORTION (dBc)
760 MHZ 470 MHZ
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 17. Intermodulation Distortion versus Peak Output Power in Broadband Circuit
IMD, INTERMODULATION DISTORTION (dBc)
Figure 18. Intermodulation Distortion versus Peak Output Power in Broadband Circuit
MOTOROLA RF DEVICE DATA
MRF374A 9
f = 470 MHz
Zsource f = 470 MHz Zo = 4 Zload f = 860 MHz f = 860 MHz
Zo = 4 f = 845 MHz f = 845 MHz Zsource f = 875 MHz Zload f = 875 MHz
MRF374 VDD = 28 V, IDQ = 400 mA, Pout = 100 W PEP f MHz 470 660 860 Zsource 5.79 + j0.97 4.52 - j0.50 3.16 - j3.73 Zload 4.54 - j2.82 4.21 - j3.04 3.86 - j3.44
MRF374A VDD = 32 V, IDQ = 400 mA, Pout = 130 W PEP f MHz 845 860 875 Zsource 3.33 - j2.42 3.03 - j2.39 2.73 - j3.10 Zload 4.56 - j2.86 4.22 - j3.16 3.87 - j3.52
Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration.
Input Matching Network
+
Device Under Test
-
Output Matching Network
Z source Z
+ load
Figure 19. Series Equivalent Input and Output Impedance
MRF374A 10
MOTOROLA RF DEVICE DATA
NOTES
MOTOROLA RF DEVICE DATA
MRF374A 11
PACKAGE DIMENSIONS
bbb
M
TA
M
B
M
G
D
2X
bbb
M
TA
M
B
M
L B
1 2
Q bbb
M
TA
M
B
M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K L M N Q R S bbb ccc INCHES MIN MAX 1.135 1.145 0.225 0.235 0.135 0.178 0.210 0.220 0.055 0.065 0.004 0.006 0.900 BSC 0.077 0.087 0.220 0.250 0.260 BSC 0.643 0.657 0.638 0.650 .125 .135 0.227 0.233 0.225 0.235 0.010 BSC 0.015 BSC DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 28.80 29.10 5.72 5.97 3.43 4.52 5.33 5.59 1.40 1.65 0.11 0.15 22.86 BSC 1.96 2.21 5.59 6.35 6.60 BSC 16.33 16.69 16.20 16.50 3.175 3.43 5.77 5.92 5.715 5.97 0.254 BSC 0.381 BSC
S (INSULATOR)
(FLANGE)
K
4 PL
3
4
R (LID) ccc
M
B
M
TA
B
M
N (LID) ccc M (INSULATOR) bbb
M M
TA
M
B
M
TA
M
B
M
F C
5
E
H A A
(FLANGE)
T
SEATING PLANE
STYLE 1: PIN 1. 2. 3. 4. 5.
CASE 375F-04 ISSUE D NI-650
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MRF374A 12
MRF374A/D MOTOROLA RF DEVICE DATA

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